![]() ![]() InAs/GaAs and InAlGaAs/AlGaAs quantum dot based solar cells for intermediate band operation,” in Fotonica AEIT Italian Conference on Photonics Technologies ( See supplementary material at for: (1) the schematic structures of IBSC solar cell and the reference one (2) comparison between their related photovoltaic properties (3)detailed description of the experimental setups and considerations on the sample heating effects (4) optical transition attribution supported by photoluminescence measurements and (5) estimation of confined barrier height by means of tunneling rate. Intermediate-band dynamics of quantum dots solar cell in concentrator photovoltaic module,” Sci. Improved quantum dot stacking for intermediate band solar cells using strain compensation,” Nanotechnology 25, 445402 (2014). , Google Scholar Scitation, ISIĪnalyzing carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells,” Appl. Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell,” J. Suppression of thermal carrier escape and efficient photocarrier generation by two-step photon absorption in InAs quantum dot intermediate–band solar cells using a dot-in-well structure,” J. The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells,” Prog. Spectrally resolved intraband transitions on two-step photon absorption in InGaAs quantum dot solar cell,” Appl. Strong enhancement of solar cell efficiency due to quantum dots with built-in charge,” Nano Lett. Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells,” Appl. , Google Scholar Crossrefįabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage,” Appl. , Google Scholar Scitationĭirect observation of two-step photon absorption in an InAs/GaAs single quantum dot for operation of intermediate-band solar cells,” Nano Lett. , Google Scholar Crossref, ISIĮxperimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells,” Appl. Review of experimental results related to the operation of intermediate band solar cells,” IEEE J. The intermediate band solar cell: Progress toward the realization of an attractive concept,” Adv. Meanwhile, this model explains why thermal escape is found to predominate over two-step two photon absorption starting from 200 K, whereas it was expected to prevail at lower temperatures (≥70 K), solely on the basis of the relatively low electron barrier height in such a system. We propose the charge separation as an effective mechanism which, reducing the recombination rate and competing with the other escape processes, enhances the infrared absorption contribution. We interpret these results on the base of charge separation by phonon assisted tunneling of holes from quantum dots. Experiments of external quantum efficiency dependent on temperature and electrical or optical bias (two-step two photon absorption) highlight a relative increase as high as 38% at 10 K under infrared excitation. In particular, the different role of holes and electrons is highlighted. In this work, we report on the competition between two-step two photon absorption, carrier recombination, and escape in the photocurrent generation mechanisms of high quality InAs/GaAs quantum dot intermediate band solar cells. ![]()
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